公开(公告)号：US09230799B2

公开(公告)日：2016-01-05

申请号：US13981048

申请日：2012-01-23

申请人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

发明人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/778 ,  H01L29/423 ,  H01L23/00 ,  H01L29/205 ,  H01L29/51

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

摘要翻译： 一种制造半导体器件的方法，该半导体器件包括构成半导体层并包括形成栅极绝缘膜的GaN（氮化镓），其中在氮化物层上形成选自SiO 2膜和Al 2 O 3膜中的至少一种膜 通过使用微波等离子体形成含GaN的GaN，并且将形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US20130292700A1

公开(公告)日：2013-11-07

申请号：US13981048

申请日：2012-01-23

申请人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

发明人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

摘要翻译： 一种制造半导体器件的方法，该半导体器件包括构成半导体层并包括形成栅极绝缘膜的GaN（氮化镓），其中在氮化物层上形成选自SiO 2膜和Al 2 O 3膜中的至少一种膜 通过使用微波等离子体形成含GaN的GaN，并且将形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US20130052816A1

公开(公告)日：2013-02-28

申请号：US13582239

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28

CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

公开(公告)号：US20130032819A1

公开(公告)日：2013-02-07

申请号：US13582229

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L29/51

CPC分类号： H01L21/28264 ,  C23C16/403 ,  C23C16/4488 ,  H01L21/02178 ,  H01L21/02277 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.

摘要翻译： 根据本发明的半导体晶体管包括由有源层形成的GaN基半导体和栅极绝缘膜构成的有源层。 栅极绝缘膜具有包含一种或多种选自Al 2 O 3，HfO 2，ZrO 2，La 2 O 3和Y 2 O 3的化合物的第一绝缘膜和形成在第一绝缘膜上的由SiO 2构成的第二绝缘膜 。

公开(公告)号：US09875899B2

公开(公告)日：2018-01-23

申请号：US13582229

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  C23C16/40 ,  C23C16/448 ,  H01L29/20

CPC分类号： H01L21/28264 ,  C23C16/403 ,  C23C16/4488 ,  H01L21/02178 ,  H01L21/02277 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.

公开(公告)号：US08906796B2

公开(公告)日：2014-12-09

申请号：US13582239

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/3205 ,  H01L29/45 ,  H01L21/285 ,  H01L29/66 ,  H01L21/28 ,  H01L29/20

CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

公开(公告)号：US20100216300A1

公开(公告)日：2010-08-26

申请号：US12675289

申请日：2008-08-07

申请人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28

CPC分类号： H01L21/02164 ,  C23C16/511 ,  H01J37/32192 ,  H01L21/02274 ,  H01L21/31055 ,  H01L21/31116

摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.

摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜 半导体衬底的表面。

公开(公告)号：US08497214B2

公开(公告)日：2013-07-30

申请号：US12675289

申请日：2008-08-07

申请人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hirokazu Ueda ,  Toshihisa Nozawa ,  Takaaki Matsuoka ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/302

CPC分类号： H01L21/02164 ,  C23C16/511 ,  H01J37/32192 ,  H01L21/02274 ,  H01L21/31055 ,  H01L21/31116

摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.

摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜 半导体衬底的表面。

公开(公告)号：US08648393B2

公开(公告)日：2014-02-11

申请号：US13372159

申请日：2012-02-13

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

IPC分类号： H01L27/148

CPC分类号： H01L27/1203 ,  H01L21/28202 ,  H01L29/518 ,  H01L29/78654 ,  H01L29/78696

摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.

摘要翻译： 累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

公开(公告)号：US08575023B2

公开(公告)日：2013-11-05

申请号：US13126249

申请日：2009-10-23

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsunori Isogai ,  Hiroaki Tanaka

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsunori Isogai ,  Hiroaki Tanaka

IPC分类号： H01L21/52

CPC分类号： H01L21/823814 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/823835 ,  H01L27/092 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4958 ,  H01L29/66772 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.

摘要翻译： 提供了实现低电阻率的接触的半导体器件制造方法。 在与半导体接触的第一金属层被用于防止氧化的第二金属层覆盖的状态下，仅将第一金属层硅化以形成不混合氧的硅化物层。 作为第一金属层的材料，使用与半导体具有预定值的功函数差的金属。 作为第二金属层的材料，使用在退火温度下不与第一金属层反应的金属。