Invention Grant
- Patent Title: Bipolar junction transistors with self-aligned terminals
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Application No.: US14677303Application Date: 2015-04-02
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Publication No.: US09231087B2Publication Date: 2016-01-05
- Inventor: John J. Benoit , James R. Elliott , Peter B. Gray , Alvin J. Joseph , Qizhi Liu , Christa R. Willets
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony J. Canale
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/66 ; H01L29/06 ; H01L29/737

Abstract:
Device structures, design structures, and fabrication methods for a bipolar junction transistor. A first layer comprised of a first semiconductor material and a second layer comprised of a second semiconductor material are disposed on a substrate containing a first terminal of the bipolar junction transistor. The second layer is disposed on the first layer and a patterned etch mask is formed on the second layer. A trench extends through the pattern hardmask layer, the first layer, and the second layer and into the substrate. The trench defines a section of the first layer stacked with a section of the second layer. A selective etching process is used to narrow the section of the second layer relative to the section of the first layer to define a second terminal and to widen a portion of the trench in the substrate to undercut the section of the first layer.
Public/Granted literature
- US20150214344A1 BIPOLAR JUNCTION TRANSISTORS WITH SELF-ALIGNED TERMINALS Public/Granted day:2015-07-30
Information query
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