Invention Grant
US09234279B2 Porous organosilicate layers, and vapor deposition systems and methods for preparing same
有权
多孔有机硅酸盐层，以及气相沉积系统及其制备方法
- Patent Title: Porous organosilicate layers, and vapor deposition systems and methods for preparing same
- Patent Title (中): 多孔有机硅酸盐层，以及气相沉积系统及其制备方法
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Application No.: US14471718Application Date: 2014-08-28
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Publication No.: US09234279B2Publication Date: 2016-01-12
- Inventor: Eugene P. Marsh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/312
- IPC: H01L21/312 ; B32B3/26 ; C23C16/00 ; B05D3/06 ; C23C16/448 ; C23C18/12 ; H01L21/02 ; H01L21/316 ; B05D1/00
Abstract:
A vapor deposition system includes a deposition chamber having a substrate positioned therein. The system includes at least one vessel containing at least one silsesquioxane precursor. The system includes at least one vessel containing at least one wetting agent or surfactant. The system includes at least one vessel containing a carboxylic acid or nitrogen base. The system includes a source for at least one reaction gas.
Public/Granted literature
- US20150075427A1 Porous Organosilicate Layers, and Vapor Deposition Systems and Methods for Preparing Same Public/Granted day:2015-03-19
Information query
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