Invention Grant
US09235528B2 Write endurance management techniques in the logic layer of a stacked memory 有权
在堆叠式存储器的逻辑层中写入耐力管理技术

Write endurance management techniques in the logic layer of a stacked memory
Abstract:
A system, method, and memory device embodying some aspects of the present invention for remapping external memory addresses and internal memory locations in stacked memory are provided. The stacked memory includes one or more memory layers configured to store data. The stacked memory also includes a logic layer connected to the memory layer. The logic layer has an Input/Output (I/O) port configured to receive read and write commands from external devices, a memory map configured to maintain an association between external memory addresses and internal memory locations, and a controller coupled to the I/O port, memory map, and memory layers, configured to store data received from external devices to internal memory locations.
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