Invention Grant
- Patent Title: Substrate rapid thermal heating system and methods
- Patent Title (中): 基板快速热采暖系统及方法
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Application No.: US13771260Application Date: 2013-02-20
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Publication No.: US09239192B2Publication Date: 2016-01-19
- Inventor: Nai-Han Cheng , Chi-Ming Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: F26B3/30
- IPC: F26B3/30 ; F26B19/00 ; F27D11/12 ; H01L21/67 ; H01L21/687 ; F27B17/00 ; F27D99/00

Abstract:
A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period.
Public/Granted literature
- US20140235071A1 SUBSTRATE RAPID THERMAL HEATING SYSTEM AND METHODS Public/Granted day:2014-08-21
Information query
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