Invention Grant
- Patent Title: Junction field effect transistor with an epitaxially grown gate structure
-
Application No.: US14167499Application Date: 2014-01-29
-
Publication No.: US09240497B2Publication Date: 2016-01-19
- Inventor: Tak H. Ning , Kangguo Cheng , Ali Khakifirooz , Pranita Kerber
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/812 ; H01L29/66 ; H01L29/78 ; H01L29/808

Abstract:
A method of fabricating a semiconductor device that includes forming a replacement gate structure on a portion of a semiconductor substrate, wherein source regions and drain regions are formed in opposing sides of the replacement gate structure. A dielectric is formed on the semiconductor substrate having an upper surface that is coplanar with an upper surface of the replacement gate structure. The replacement gate structure is removed to provide an opening to an exposed portion of the semiconductor substrate. A functional gate conductor is epitaxially grown within the opening in direct contact with the exposed portion of the semiconductor substrate. The method is applicable to planar metal oxide semiconductor field effect transistors (MOSFETs) and fin field effect transistors (finFETs).
Public/Granted literature
- US20140145246A1 JUNCTION FIELD EFFECT TRANSISTOR WITH AN EPITAXIALLY GROWN GATE STRUCTURE Public/Granted day:2014-05-29
Information query
IPC分类: