Invention Grant
US09245847B2 Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formed
有权
在形成有凹部的绝缘层上形成含金属元素层的半导体装置的制造方法，形成有凹部的绝缘层的半导体装置以及形成凹部的绝缘层上的半导体层
- Patent Title: Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formed
- Patent Title (中): 在形成有凹部的绝缘层上形成含金属元素层的半导体装置的制造方法，形成有凹部的绝缘层的半导体装置以及形成凹部的绝缘层上的半导体层
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Application No.: US14510388Application Date: 2014-10-09
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Publication No.: US09245847B2Publication Date: 2016-01-26
- Inventor: Kenji Matsumoto , Tatsufumi Hamada , Kaoru Maekawa
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-090393 20120411
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/02 ; H01L21/3105 ; H01L21/768 ; C23C16/06 ; C23C16/40 ; C23C16/455 ; C23C16/46 ; C23C16/50 ; H01L21/67 ; C23C16/04 ; C23C16/56
Abstract:
A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere.
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