发明授权
US09255944B1 Tip structure of platinum-platinum silicide-silicon composite field sensor probe and method for forming MSTA strucutre on the probe
有权
铂铂硅化硅 - 硅复合材料场传感器探头的尖端结构和探针上形成MSTA结构的方法
- 专利标题: Tip structure of platinum-platinum silicide-silicon composite field sensor probe and method for forming MSTA strucutre on the probe
- 专利标题(中): 铂铂硅化硅 - 硅复合材料场传感器探头的尖端结构和探针上形成MSTA结构的方法
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申请号: US14665121申请日: 2015-03-23
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公开(公告)号: US09255944B1公开(公告)日: 2016-02-09
- 发明人: Chun-Ting Lin , Ming-Hua Shiao , Shu-Hung Tung , Mao-Nan Chang
- 申请人: National Applied Research Laboratories
- 申请人地址: TW Taipei
- 专利权人: NATIONAL APPLIED RESEARCH LABORATORIES
- 当前专利权人: NATIONAL APPLIED RESEARCH LABORATORIES
- 当前专利权人地址: TW Taipei
- 代理机构: Jackson IPG PLLC
- 代理商 Demian K. Jackson
- 主分类号: G01Q70/14
- IPC分类号: G01Q70/14 ; G01Q70/18
摘要:
A platinum-platinum silicide modified silicon composite tip apex, and a method for forming the aforesaid tip apex are disclosed, where a metallic precursor solution and a silicon probe are reacted to form a local platinum nano-structure, which could be precisely controlled with local selectivity, and a local platinum silicide layer is formed between the platinum nano-structure and the silicon probe with an atmospheric microwave annealing (a-MWA) process conducted as well, largely enhancing the conductivity of the tip and spatial resolution of the field detection in field sensitive scanning probe microscopy. In addition to exemption from a stray-field effect and thus having better image quality, the platinum silicide-containing probe could more efficiently enhance the interfacial electron transfer efficiency as compared to the probe tip having only a platinum nano-structure, so that the probe could be applicable to a controlled conductive probe having high spatial resolution.
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