Invention Grant
- Patent Title: Method of making an extreme ultraviolet pellicle
- Patent Title (中): 制造极紫外线防护薄膜的方法
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Application No.: US14259194Application Date: 2014-04-23
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Publication No.: US09256123B2Publication Date: 2016-02-09
- Inventor: Chih-Tsung Shih , Tien-Hsi Lee , Chia-Jen Chen , Shang-Chieh Chien , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: G03F1/64
- IPC: G03F1/64 ; G03F7/20 ; B29C71/02

Abstract:
The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film.
Public/Granted literature
- US20150309405A1 METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE Public/Granted day:2015-10-29
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