发明授权
US09257410B2 Package assembly including a semiconductor substrate in which a first portion of a surface of the semiconductor substrate is recessed relative to a second portion of the surface of the semiconductor substrate to form a recessed region in the semiconductor substrate
有权
包含半导体衬底的封装组件,其中半导体衬底的表面的第一部分相对于半导体衬底的表面的第二部分凹陷,以在半导体衬底中形成凹陷区域
- 专利标题: Package assembly including a semiconductor substrate in which a first portion of a surface of the semiconductor substrate is recessed relative to a second portion of the surface of the semiconductor substrate to form a recessed region in the semiconductor substrate
- 专利标题(中): 包含半导体衬底的封装组件,其中半导体衬底的表面的第一部分相对于半导体衬底的表面的第二部分凹陷,以在半导体衬底中形成凹陷区域
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申请号: US13012644申请日: 2011-01-24
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公开(公告)号: US09257410B2公开(公告)日: 2016-02-09
- 发明人: Albert Wu , Roawen Chen , Chung Chyung Han , Shiann-Ming Liou , Chien-Chuan Wei , Runzi Chang , Scott Wu , Chuan-Cheng Cheng
- 申请人: Albert Wu , Roawen Chen , Chung Chyung Han , Shiann-Ming Liou , Chien-Chuan Wei , Runzi Chang , Scott Wu , Chuan-Cheng Cheng
- 申请人地址: BB St. Michael
- 专利权人: Marvell World Trade Ltd.
- 当前专利权人: Marvell World Trade Ltd.
- 当前专利权人地址: BB St. Michael
- 主分类号: H01L25/04
- IPC分类号: H01L25/04 ; H01L21/48 ; H01L23/13 ; H01L23/14 ; H01L23/498 ; H01L25/065 ; H01L25/10 ; H01L25/00 ; H01L23/367 ; H01L23/00
摘要:
Embodiments of the present disclosure provide an apparatus comprising a semiconductor substrate having a first surface, a second surface that is disposed opposite to the first surface, wherein at least a portion of the first surface is recessed to form a recessed region of the semiconductor substrate, and one or more vias formed in the recessed region of the semiconductor substrate to provide an electrical or thermal pathway between the first surface and the second surface of the semiconductor substrate, and a die coupled to the semiconductor substrate, the die being electrically coupled to the one or more vias formed in the recessed region of the semiconductor substrate. Other embodiments may be described and/or claimed.
公开/授权文献
- US20110186998A1 RECESSED SEMICONDUCTOR SUBSTRATES 公开/授权日:2011-08-04
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