Interlayer communications for 3D integrated circuit stack

Invention Grant

US09263422B2 Interlayer communications for 3D integrated circuit stack 有权

Patent Title: Interlayer communications for 3D integrated circuit stack
Application No.: US14599245

Application Date: 2015-01-16
Publication No.: US09263422B2

Publication Date: 2016-02-16
Inventor: Guido Droege , Niklas Linkewitsch , Andre Schaefer
Applicant: Intel Corporation
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Green, Howard & Mughal LLP
Main IPC: H01L23/02
IPC: H01L23/02 ; H01L25/065 ; H01L23/64 ; H01L23/522 ; H01L23/48 ; G11C5/06 ; G11C7/10 ; G11C5/04

Abstract:

Some embodiments provide capacitive AC coupling inter-layer communications for 3D stacked modules.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/02	.容器；封接（H01L23/12，H01L23/34，H01L23/48，H01L23/552优先）