Invention Grant
US09269429B2 Resistive memory device, resistive memory system, and method of operating resistive memory device
有权
电阻式存储器件，电阻式存储器系统和操作电阻式存储器件的方法
- Patent Title: Resistive memory device, resistive memory system, and method of operating resistive memory device
- Patent Title (中): 电阻式存储器件，电阻式存储器系统和操作电阻式存储器件的方法
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Application No.: US14665127Application Date: 2015-03-23
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Publication No.: US09269429B2Publication Date: 2016-02-23
- Inventor: Hyun-Kook Park , Dae-Seok Byeon , Yeong-Taek Lee , Bo-Geun Kim , Yong-Kyu Lee , Hyo-Jin Kwon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0091306 20140718
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A resistive memory device includes a memory cell array including a plurality vertically stacked layers having one layer designated as an interference-free layer and another layer designated as an access prohibited layer, wherein the interference-free layer and the access prohibited layer share a connection with at least one signal line and access operations directed to memory cells the access prohibited layer are prohibited.
Public/Granted literature
- US20160019951A1 RESISTIVE MEMORY DEVICE, RESISTIVE MEMORY SYSTEM, AND METHOD OF OPERATING RESISTIVE MEMORY DEVICE Public/Granted day:2016-01-21
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