Invention Grant
- Patent Title: Dual damascene dual alignment interconnect scheme
- Patent Title (中): 双镶嵌双对准互连方案
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Application No.: US14449314Application Date: 2014-08-01
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Publication No.: US09269621B2Publication Date: 2016-02-23
- Inventor: Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Shom Ponoth , Chih-Chao Yang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/44 ; H01L21/768 ; H01L23/522
Abstract:
A stack of a first metal line and a first dielectric cap material portion is formed within a line trench of first dielectric material layer. A second dielectric material layer is formed thereafter. A line trench extending between the top surface and the bottom surface of the second dielectric material layer is patterned. A photoresist layer is applied over the second dielectric material layer and patterned with a via pattern. An underlying portion of the first dielectric cap material is removed by an etch selective to the dielectric materials of the first and second dielectric material layer to form a via cavity that is laterally confined along the widthwise direction of the line trench and along the widthwise direction of the first metal line. A dual damascene line and via structure is formed, which includes a via structure that is laterally confined along two independent horizontal directions.
Public/Granted literature
- US20140342549A1 DUAL DAMASCENE DUAL ALIGNMENT INTERCONNECT SCHEME Public/Granted day:2014-11-20
Information query
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