Invention Grant
US09276113B2 Structure and method to make strained FinFET with improved junction capacitance and low leakage
有权
具有改善的结电容和低泄漏的应变FinFET的结构和方法
- Patent Title: Structure and method to make strained FinFET with improved junction capacitance and low leakage
- Patent Title (中): 具有改善的结电容和低泄漏的应变FinFET的结构和方法
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Application No.: US14202525Application Date: 2014-03-10
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Publication No.: US09276113B2Publication Date: 2016-03-01
- Inventor: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Darsen D. Lu , Alexander Reznicek , Kern Rim
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Corporation
- Current Assignee: International Business Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L21/306 ; H01L21/02 ; H01L29/165
Abstract:
A method of forming a semiconductor device that includes forming a gate structure on a fin structure and etching the source and drain region portions of the fin structure to provide a recessed surface. A first semiconductor layer is formed on the recessed surface of the fin structure that is doped to a first conductivity type. A leakage barrier layer is formed on the first semiconductor layer. A second semiconductor layer is formed on the leakage barrier layer. The second semiconductor layer is doped to a second conductivity type.
Public/Granted literature
- US20150255606A1 STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION CAPACITANCE AND LOW LEAKAGE Public/Granted day:2015-09-10
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