发明授权
US09286931B2 Materials for near field transducers and near field transducers containing same
有权
用于近场换能器和含有相同场的换能器的近场换能器的材料
- 专利标题： Materials for near field transducers and near field transducers containing same
- 专利标题（中）： 用于近场换能器和含有相同场的换能器的近场换能器的材料
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申请号： US14313551申请日： 2014-06-24
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公开(公告)号： US09286931B2公开(公告)日： 2016-03-15
- 发明人: Sethuraman Jayashankar , Michael C. Kautzky
- 申请人： SEAGATE TECHNOLOGY LLC
- 申请人地址： US CA Cupertino
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Cupertino
- 代理机构： Mueting, Raasch & Gebhardt, P.A.
- 主分类号： G11B11/00
- IPC分类号： G11B11/00 ; G11B13/08 ; G11B5/31 ; G11B7/1387 ; C22C5/02 ; C22C5/06 ; C22C9/02 ; C22C9/08 ; C22C11/04 ; C22C13/00 ; C22C18/02 ; C22C19/03 ; C22C20/00 ; C22C21/00 ; C22C21/02 ; C22C21/10 ; C22C22/00 ; C22C27/00 ; C22C27/02 ; C22C27/06 ; C22C38/06 ; G11B5/48 ; C01F7/00 ; C01G5/00 ; G11B5/60 ; C23C14/58 ; C22C5/04 ; C22C5/10 ; C22C9/00 ; C22C9/04 ; C22C9/05 ; C22C9/06 ; C22C9/10 ; C22C19/07 ; C22C21/06 ; C22C24/00 ; C22C28/00 ; C22C30/02 ; G11B5/00 ; B32B15/01
摘要：
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
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