Invention Grant
US09286931B2 Materials for near field transducers and near field transducers containing same
有权
用于近场换能器和含有相同场的换能器的近场换能器的材料
- Patent Title: Materials for near field transducers and near field transducers containing same
- Patent Title (中): 用于近场换能器和含有相同场的换能器的近场换能器的材料
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Application No.: US14313551Application Date: 2014-06-24
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Publication No.: US09286931B2Publication Date: 2016-03-15
- Inventor: Sethuraman Jayashankar , Michael C. Kautzky
- Applicant: SEAGATE TECHNOLOGY LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: G11B11/00
- IPC: G11B11/00 ; G11B13/08 ; G11B5/31 ; G11B7/1387 ; C22C5/02 ; C22C5/06 ; C22C9/02 ; C22C9/08 ; C22C11/04 ; C22C13/00 ; C22C18/02 ; C22C19/03 ; C22C20/00 ; C22C21/00 ; C22C21/02 ; C22C21/10 ; C22C22/00 ; C22C27/00 ; C22C27/02 ; C22C27/06 ; C22C38/06 ; G11B5/48 ; C01F7/00 ; C01G5/00 ; G11B5/60 ; C23C14/58 ; C22C5/04 ; C22C5/10 ; C22C9/00 ; C22C9/04 ; C22C9/05 ; C22C9/06 ; C22C9/10 ; C22C19/07 ; C22C21/06 ; C22C24/00 ; C22C28/00 ; C22C30/02 ; G11B5/00 ; B32B15/01
Abstract:
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
Public/Granted literature
- US20140374376A1 MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME Public/Granted day:2014-12-25
Information query
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