发明授权
- 专利标题： Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same
- 专利标题（中）： 抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法
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申请号： US12654737申请日： 2009-12-30
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公开(公告)号： US09291899B2公开(公告)日： 2016-03-22
- 发明人: Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
- 申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
- 申请人地址： KR Gumi-si, Kyeongsangbuk-do
- 专利权人： CHEIL INDUSTRIES, INC.
- 当前专利权人： CHEIL INDUSTRIES, INC.
- 当前专利权人地址： KR Gumi-si, Kyeongsangbuk-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2008-0137227 20081230
- 主分类号： G03F7/075
- IPC分类号： G03F7/075 ; G03F7/09 ; G03F7/11 ; G03F7/30 ; G03F7/36 ; C08G77/50 ; C08G77/52 ; C08K5/00 ; C08L83/04 ; C08L83/14 ; C09D183/04 ; C09D183/14 ; C08G77/12 ; C08G77/14 ; C08G77/16 ; C08G77/18 ; C08G77/20 ; C08G77/24 ; C08G77/26 ; C08G77/00
摘要：
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
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