Invention Grant
- Patent Title: Double data rate in parallel testing
- Patent Title (中): 双数据速率并行测试
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Application No.: US14569983Application Date: 2014-12-15
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Publication No.: US09293224B1Publication Date: 2016-03-22
- Inventor: Dzung Nguyen , Luyen T. Vu
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/08 ; G11C16/10 ; G11C16/26 ; G11C16/32 ; G11C29/02 ; G01R31/3177 ; G01R31/3185 ; G11C29/10

Abstract:
Briefly, in accordance with one or more embodiments, an apparatus to test a semiconductor device comprises a controller configured to perform one or more tests on the semiconductor device, a reduce low pin count (RLPC) circuit configured to write data to the semiconductor device or read data from the semiconductor device at a double data rate (DDR) with respect to a single data rate (SDR), and pad logic to couple to the semiconductor device, the pad logic configured to provide a trimmable data access time from clock (tAC) signal to select different access times of a single data rate (SDR) or a double data rate (DDR) mode of operation, wherein a loading time or an unloading time of the semiconductor device being tested, or a combination thereof, is reduced when a DDR mode is selected.
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