Invention Grant
- Patent Title: Semiconductor apparatus and manufacturing method of the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14524066Application Date: 2014-10-27
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Publication No.: US09293471B1Publication Date: 2016-03-22
- Inventor: Shih-Hung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/115 ; H01L21/28 ; H01L21/306 ; H01L21/311 ; H01L29/49 ; H01L21/768 ; H01L29/792
Abstract:
A semiconductor apparatus including a first stacked structure and a second stacked structure is provided. The first stacked structure and the second stacked structure are arranged along a first direction, and extended along a second direction perpendicular to the first direction. The first stacked structure includes a first operating portion and a first supporting portion. The first operating portion and the first supporting portion are alternately arranged along the second direction. A width of the first operating portion along the first direction is smaller than a width of the first supporting portion along the first direction.
Information query
IPC分类:
