Invention Grant
- Patent Title: Film forming method and film forming apparatus
- Patent Title (中): 成膜方法和成膜装置
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Application No.: US14044119Application Date: 2013-10-02
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Publication No.: US09293543B2Publication Date: 2016-03-22
- Inventor: Shuji Azumo , Yusaku Kashiwagi , Yuichiro Morozumi , Yu Wamura , Katsushige Harada , Kosuke Takahashi , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi
- Applicant: TOKYO ELECTRON LIMITED , OSAKA UNIVERSITY
- Applicant Address: JP Tokyo JP Osaka
- Assignee: TOKYO ELECTRON LIMITED,OSAKA UNIVERSITY
- Current Assignee: TOKYO ELECTRON LIMITED,OSAKA UNIVERSITY
- Current Assignee Address: JP Tokyo JP Osaka
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-221662 20121003
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/441 ; H01L29/51 ; H01L29/40 ; H01L21/04 ; H01L21/28 ; H01L21/02 ; C23C16/30 ; H01L29/66 ; H01L29/78 ; H01L29/16 ; H01L29/20
Abstract:
Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.
Public/Granted literature
- US20140094027A1 FILM FORMING METHOD AND FILM FORMING APPARATUS Public/Granted day:2014-04-03
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