Invention Grant
- Patent Title: Semiconductor device and driving method of semiconductor device
- Patent Title (中): 半导体器件及其驱动方法
-
Application No.: US13889957Application Date: 2013-05-08
-
Publication No.: US09299432B2Publication Date: 2016-03-29
- Inventor: Tatsuya Onuki , Wataru Uesugi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2012-109295 20120511; JP2013-010793 20130124
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C14/00 ; G11C5/10

Abstract:
To provide a semiconductor device including a volatile memory which achieves high speed operation and lower power consumption. For example, the semiconductor device includes an SRAM provided with first and second data holding portions and a non-volatile memory provided with third and fourth second data holding portions. The first data holding portion is electrically connected to the fourth data holding portion through a transistor. The second data holding portion is electrically connected to the third data holding portion through a transistor. While the SRAM holds data, the transistor is on so that both the SRAM and the non-volatile memory hold the data. Then, the transistor is turned off before supply of power is stopped, so that the data becomes non-volatile.
Public/Granted literature
- US20130301331A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2013-11-14
Information query