An integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer pitches, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer line widths, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers.