公开(公告)号：US09299665B2

公开(公告)日：2016-03-29

申请号：US14519235

申请日：2014-10-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Paul S. Andry ,  Cyril Cabral, Jr. ,  Kenneth P. Rodbell ,  Robert L. Wisnieff

IPC: H01L23/556 ,  H01L23/00 ,  H01L21/304 ,  H01L21/48

CPC classification number: H01L23/556 ,  H01L21/304 ,  H01L21/481 ,  H01L24/11 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/16 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29111 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/2064 ,  H01L2924/3025 ,  H01L2224/13111 ,  H01L2924/00014

Abstract: A structure fabrication method. An integrated circuit that includes N chip electric pads is bonded to a top side of an interposing shield that includes N electric conductors. N is at least 2. The interposing shield includes a shield material that includes a first semiconductor material. A bottom side of the interposing shield is polished, which exposes the N electric conductors to a surrounding ambient. The bonding includes bonding the integrated circuit to the top side of the interposing shield such that the N chip electric pads are in electrical contact and direct physical contact with corresponding electrical pads of the N electric conductors. The shield material covers the N electric conductors in a manner that the N electric conductors are not exposed to the surrounding ambient. The polishing removes a sufficient amount of the shield material to expose the N electric conductors to the surrounding ambient.

Abstract translation: 一种结构制造方法。 包括N个芯片电焊盘的集成电路被结合到包括N个电导体的插入屏蔽的顶侧。 N为至少2.插入屏蔽包括包括第一半导体材料的屏蔽材料。 中间屏蔽的底面被抛光，将N根电导体暴露在周围环境中。 接合包括将集成电路接合到中间屏蔽的顶侧，使得N个芯片电极焊盘与N个电导体的相应电焊盘电接触并直接物理接触。 屏蔽材料以N个电导体不暴露于周围环境的方式覆盖N个电导体。 抛光去除了足够量的屏蔽材料，以将N个电导体暴露于周围环境。

公开(公告)号：US09263393B2

公开(公告)日：2016-02-16

申请号：US14711872

申请日：2015-05-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cyril Cabral, Jr. ,  Benjamin L. Fletcher ,  Nicholas C. M. Fuller ,  Eric A. Joseph ,  Hiroyuki Miyazoe

IPC: H01L23/535 ,  H01L21/3213 ,  H01L27/092 ,  H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/8238

CPC classification number: H01L23/535 ,  H01L21/02109 ,  H01L21/31111 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76885 ,  H01L21/823871 ,  H01L27/092 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines have pitches of less than one hundred nanometers and sidewall tapers of between approximately eighty and ninety degrees. Another embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines are fabricated by providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer and sputter etching the layer of conductive metal using a methanol plasma, wherein a portion of the layer of conductive metal that remains after the sputter etching forms the one or more conductive lines.

公开(公告)号：US09299639B2

公开(公告)日：2016-03-29

申请号：US13734524

申请日：2013-01-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cyril Cabral, Jr. ,  Sebastian U. Engelmann ,  Benjamin L. Fletcher ,  Michael S. Gordon ,  Eric A. Joseph

IPC: H01L23/48 ,  H01L29/45 ,  H01L21/768 ,  H01L23/532 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L23/48 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/53252 ,  H01L23/53266 ,  H01L29/45 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

Abstract: An integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer pitches, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer line widths, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers.

Abstract translation: 集成电路包括多个半导体器件和连接半导体器件的多条导线，其中导线包括沉积在过渡金属上的过渡金属和保护帽。 或者，集成电路包括多个半导体器件和连接半导体器件并具有八十纳米间距的多条导线，其中导电线包括沉积在过渡金属上的过渡金属和保护帽，其中保护性 帽的厚度在约5至15纳米之间。 或者，集成电路包括多个半导体器件和连接半导体器件并具有八十纳米线宽的多条导线，其中导电线包括沉积在过渡金属上的过渡金属和保护帽，其中， 保护帽的厚度介于约5至15纳米之间。

公开(公告)号：US09299638B2

公开(公告)日：2016-03-29

申请号：US13707003

申请日：2012-12-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cyril Cabral, Jr. ,  Sebastian U. Engelmann ,  Benjamin L. Fletcher ,  Michael S. Gordon ,  Eric A. Joseph

IPC: H01L21/4763 ,  H01L23/48 ,  H01L29/45 ,  H01L21/768 ,  H01L23/532 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L23/48 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/53252 ,  H01L23/53266 ,  H01L29/45 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

Abstract: Fabricating conductive lines in an integrated circuit includes patterning a layer of a transition metal to form the conductive lines and depositing a protective cap on at least some of the one or more conductive lines. Alternatively, fabricating conductive lines in an integrated circuit includes patterning a layer of a transition metal to form the conductive lines, wherein the conductive lines have sub-eighty nanometer pitches, and depositing a protective cap on at least some of the conductive lines, wherein the protective cap has a thickness between approximately five and fifteen nanometers. Alternatively, fabricating conductive lines in an integrated circuit includes patterning a layer of a transition metal to form the conductive lines, wherein the conductive lines have sub-eighty nanometer line widths, and depositing a protective cap on at least some of the conductive lines, wherein the protective cap has a thickness between approximately five and fifteen nanometers.

Abstract translation: 在集成电路中制造导线包括图案化过渡金属层以形成导电线并且在一个或多个导电线中的至少一些导电线上沉积保护盖。 或者，在集成电路中制造导线包括图案化过渡金属层以形成导电线，其中导线具有八十纳米的间距，并且在至少一些导电线上沉积保护盖，其中， 保护帽的厚度介于约5至15纳米之间。 或者，在集成电路中制造导线包括图案化过渡金属层以形成导电线，其中导线具有八十纳米线宽，并且在至少一些导电线上沉积保护盖，其中 保护帽的厚度在大约5至15纳米之间。

公开(公告)号：US10446421B2

公开(公告)日：2019-10-15

申请号：US15951547

申请日：2018-04-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cyril Cabral, Jr. ,  Lawrence A. Clevenger ,  John M. Cohn ,  Jeffrey P. Gambino ,  William J. Murphy ,  Anthony J. Telensky

IPC: H01L21/67 ,  C23C14/54 ,  G01B7/06 ,  G03F7/20 ,  G05B19/418

Abstract: Systems and methods are provided for implementing a crystal oscillator to monitor and control semiconductor fabrication processes. More specifically, a method is provided for that includes performing at least one semiconductor fabrication process on a material of an integrated circuit (IC) disposed within a processing chamber. The method further includes monitoring by at least one electronic oscillator disposed within the processing chamber for the presence or absence of a predetermined substance generated by the at least one semiconductor fabrication process. The method further includes controlling the at least one semiconductor fabrication process based on the presence or absence of the predetermined substance detected by the at least one electronic oscillator.