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US09299789B2 Memory devices including graphene switching devices 有权
存储器件包括石墨烯开关器件

Memory devices including graphene switching devices
Abstract:
A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.
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