Invention Grant
- Patent Title: Memory devices including graphene switching devices
- Patent Title (中): 存储器件包括石墨烯开关器件
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Application No.: US13943006Application Date: 2013-07-16
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Publication No.: US09299789B2Publication Date: 2016-03-29
- Inventor: David Seo , Ho-jung Kim , Hyun-jong Chung , Seong-jun Park , Kyung-eun Byun , Hyun-jae Song , Jin-seong Heo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0111379 20121008
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L29/772 ; H01L29/872 ; H01L29/88 ; H01L29/40
Abstract:
A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.
Public/Granted literature
- US20140097404A1 MEMORY DEVICES INCLUDING GRAPHENE SWITCHING DEVICES Public/Granted day:2014-04-10
Information query
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