Invention Grant
- Patent Title: Memory device and associated controlling method
- Patent Title (中): 存储器和相关控制方法
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Application No.: US14309920Application Date: 2014-06-20
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Publication No.: US09312029B2Publication Date: 2016-04-12
- Inventor: Win-San Khwa , Chao-I Wu , Tzu-Hsiang Su
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C29/12 ; G11C29/50 ; G11C29/04 ; G11C13/00

Abstract:
A memory device and associated controlling method are provided. The memory device includes a memory cell array, a sensing unit and a controller. The memory cell array has a plurality of memory cells. The sensing unit is electrically connected to the memory cell array and the controller. The sensing unit senses characteristic of a memory cell of the plurality of memory cells. The controller determines whether the characteristic of the one of the memory cells deviates and accordingly controls the memory cell array.
Public/Granted literature
- US20150255126A1 MEMORY DEVICE AND ASSOCIATED CONTROLLING METHOD Public/Granted day:2015-09-10
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