发明授权
- 专利标题： Semiconductor device metallization systems and methods
- 专利标题（中）： 半导体器件金属化系统和方法
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申请号： US14153738申请日： 2014-01-13
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公开(公告)号： US09318364B2公开(公告)日： 2016-04-19
- 发明人: Hsiang-Huan Lee , Shau-Lin Shue , Keith Kuang-Kuo Koai , Hai-Ching Chen , Tung-Ching Tseng , Wen-Cheng Yang , Chung-En Kao , Ming-Han Lee , Hsin-Yen Huang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/677 ; H01L21/02 ; H01L21/306 ; H01L21/768 ; H01L21/67
摘要：
Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.
公开/授权文献
- US20150197849A1 Semiconductor Device Metallization Systems and Methods 公开/授权日：2015-07-16
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