Invention Grant
- Patent Title: Isolation scheme for bipolar transistors in BiCMOS technology
- Patent Title (中): BiCMOS技术中双极晶体管的隔离方案
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Application No.: US14492582Application Date: 2014-09-22
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Publication No.: US09318584B2Publication Date: 2016-04-19
- Inventor: Peng Cheng , Peter B. Gray , Vibhor Jain , Robert K. Leidy , Qizhi Liu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony J. Canale
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/66 ; H01L29/737 ; H01L21/762
Abstract:
Device structures and design structures for a bipolar junction transistor. The device structure includes a collector region in a substrate, a plurality of isolation structures extending into the substrate and comprised of an electrical insulator, and an isolation region in the substrate. The isolation structures have a length and are arranged with a pitch transverse to the length such that each adjacent pair of the isolation structures is separated by a respective section of the substrate. The isolation region is laterally separated from at least one of the isolation structures by a first portion of the collector region. The isolation region laterally separates a second portion of the collector region from the first portion of the collector region. The device structure further includes an intrinsic base on the second portion of the collector region and an emitter on the intrinsic base. The emitter has a length transversely oriented relative to the length of the isolation structures.
Public/Granted literature
- US20150041956A1 ISOLATION SCHEME FOR BIPOLAR TRANSISTORS IN BICMOS TECHNOLOGY Public/Granted day:2015-02-12
Information query
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