Invention Grant
US09324567B2 Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials
有权
用于蚀刻含Si，含锗和含金属材料的气体簇离子束蚀刻工艺
- Patent Title: Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials
- Patent Title (中): 用于蚀刻含Si，含锗和含金属材料的气体簇离子束蚀刻工艺
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Application No.: US13826600Application Date: 2013-03-14
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Publication No.: US09324567B2Publication Date: 2016-04-26
- Inventor: Martin D. Tabat , Christopher K. Olsen , Yan Shao , Ruairidh MacCrimmon , Luis Fernandez
- Applicant: TEL Epion Inc.
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/311 ; H01L21/3213 ; C23F4/00 ; H01L21/3065
Abstract:
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
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