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公开(公告)号：US20200066485A1
公开(公告)日：2020-02-27
申请号：US16665357
申请日：2019-10-28
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC: H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
Abstract: An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.
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公开(公告)号：US20180197715A1
公开(公告)日：2018-07-12
申请号：US15863732
申请日：2018-01-05
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC: H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
Abstract: An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.
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Patent Agency Ranking
3.发明申请GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS 审中-公开用于实现多种材料的目标蚀刻过程的气体聚集体离子束蚀刻方法公开(公告)号：US20130309872A1
公开(公告)日：2013-11-21
申请号：US13950862
申请日：2013-07-25
Applicant: TEL Epion Inc.
Inventor： Martin D. Tabat , Christopher K. Olsen , Yan Shao , Ruairidh MacCrimmon
IPC: H01L21/306
CPC classification number: H01L21/306 , C23F4/00 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137
Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.
Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。
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公开(公告)号：US20150270135A1
公开(公告)日：2015-09-24
申请号：US14731020
申请日：2015-06-04
Applicant: TEL Epion Inc.
Inventor： Martin D. Tabat , Christopher K. Olsen , Yan Shao , Luis Fernandez
IPC: H01L21/3065
CPC classification number: H01L21/3065 , C23F4/00 , H01J2237/334 , H01L21/02046 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137
Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials are described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB is formed from a pressurized gas mixture containing at least one etch compound and at least one additional gas, wherein the concentration of the at least one etch compound in the GCIB exceeds 5 at % of the pressurized gas mixture.
Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB由含有至少一种蚀刻化合物和至少一种另外的气体的加压气体混合物形成，其中GCIB中的至少一种蚀刻化合物的浓度超过加压气体混合物的5at％。
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5.发明申请Gas Cluster Ion Beam Etching Process for Etching Si-Containing, Ge-Containing, and Metal-Containing Materials 有权用于蚀刻含Si，含Ge和含金属材料的气体簇离子束蚀刻工艺公开(公告)号：US20130196509A1
公开(公告)日：2013-08-01
申请号：US13826600
申请日：2013-03-14
Applicant: TEL Epion Inc.
Inventor： Martin D. Tabat , Christopher K. Olsen , Yan Shao , Ruairidh MacCrimmon , Luis Fernandez
IPC: H01L21/3065
CPC classification number: H01L21/306 , C23F4/00 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137
Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。
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公开(公告)号：US10861674B2
公开(公告)日：2020-12-08
申请号：US16665357
申请日：2019-10-28
Applicant: TEL Epion Inc.
Inventor： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC: H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
Abstract: An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.
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7.发明授权Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials 有权用于蚀刻含Si，含锗和含金属材料的气体簇离子束蚀刻工艺公开(公告)号：US09324567B2
公开(公告)日：2016-04-26
申请号：US13826600
申请日：2013-03-14
Applicant: TEL Epion Inc.
Inventor： Martin D. Tabat , Christopher K. Olsen , Yan Shao , Ruairidh MacCrimmon , Luis Fernandez
IPC: H01L21/306 , H01L21/311 , H01L21/3213 , C23F4/00 , H01L21/3065
CPC classification number: H01L21/306 , C23F4/00 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137
Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
Abstract translation: 描述了用于执行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。
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