公开(公告)号：US20130309872A1

公开(公告)日：2013-11-21

申请号：US13950862

申请日：2013-07-25

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon

IPC: H01L21/306

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。

公开(公告)号：US20150270135A1

公开(公告)日：2015-09-24

申请号：US14731020

申请日：2015-06-04

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23F4/00 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials are described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB is formed from a pressurized gas mixture containing at least one etch compound and at least one additional gas, wherein the concentration of the at least one etch compound in the GCIB exceeds 5 at % of the pressurized gas mixture.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB由含有至少一种蚀刻化合物和至少一种另外的气体的加压气体混合物形成，其中GCIB中的至少一种蚀刻化合物的浓度超过加压气体混合物的5at％。

公开(公告)号：US10256095B2

公开(公告)日：2019-04-09

申请号：US15266639

申请日：2016-09-15

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Noel Russell ,  Joshua LaRose ,  Nicholas Joy ,  Luis Fernandez ,  Allen J. Leith ,  Steven P. Caliendo ,  Yan Shao ,  Vincent Lagana-Gizzo

IPC: H01L21/02 ,  H01L21/66 ,  G05B19/406 ,  H01L21/265 ,  H01L21/263 ,  H01J37/304

Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

公开(公告)号：US20150332924A1

公开(公告)日：2015-11-19

申请号：US14696063

申请日：2015-04-24

Applicant: TEL Epion Inc.

Inventor： Kenneth Regan ,  Yan Shao ,  Robert K. Becker ,  Christopher K. Olsen

IPC: H01L21/265 ,  H01L21/02 ,  H01L21/285 ,  H01L21/263

CPC classification number: C23C14/221 ,  C23C14/10 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/2633 ,  H01L21/26566 ,  H01L21/28556

Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle φ, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract translation: 提供了一种控制用于处理衬底上的结构的气体簇离子束（GCIB）系统的方法。 GCIB系统包括用于将GCIB引向衬底的偏转板，GCIB系统耦合到被配置成在三维中移动衬底的衬底扫描装置。 当衬底被衬底扫描装置移动时，衬底暴露于GCIB。 控制器用于控制一组偏转操作参数，包括偏转角＆phgr;偏转板的电压差，偏转板功率的频率，射束电流，衬底距离，喷嘴中的压力，过程中的气体流速 腔室，束灼伤的分离，豆烧的持续时间和/或束导流器输出的占空比。

公开(公告)号：US20130196509A1

公开(公告)日：2013-08-01

申请号：US13826600

申请日：2013-03-14

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

公开(公告)号：US09540725B2

公开(公告)日：2017-01-10

申请号：US14696063

申请日：2015-04-24

Applicant: TEL Epion Inc.

Inventor： Kenneth Regan ,  Yan Shao ,  Robert K. Becker ,  Christopher K. Olsen

IPC: H01L21/425 ,  C23C14/22 ,  H01L21/265 ,  H01L21/263 ,  H01L21/02 ,  H01L21/285 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  C23C14/10

CPC classification number: C23C14/221 ,  C23C14/10 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/2633 ,  H01L21/26566 ,  H01L21/28556

Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle φ, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract translation: 提供了一种控制用于处理衬底上的结构的气体簇离子束（GCIB）系统的方法。 GCIB系统包括用于将GCIB引向衬底的偏转板，GCIB系统耦合到被配置成在三维中移动衬底的衬底扫描装置。 当衬底被衬底扫描装置移动时，衬底暴露于GCIB。 控制器用于控制一组偏转操作参数，包括偏转角φ，偏转板的电压差，偏转板功率的频率，光束电流，衬底距离，喷嘴中的压力，处理室中的气体流速 ，光束灼伤分离，豆烧的持续时间和/或光束偏转器输出的占空比。

公开(公告)号：US09324567B2

公开(公告)日：2016-04-26

申请号：US13826600

申请日：2013-03-14

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon ,  Luis Fernandez

IPC: H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  C23F4/00 ,  H01L21/3065

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract translation: 描述了用于执行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

公开(公告)号：US20170077001A1

公开(公告)日：2017-03-16

申请号：US15266639

申请日：2016-09-15

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Noel Russell ,  Joshua LaRose ,  Nicholas Joy ,  Luis Fernandez ,  Allen J. Leith ,  Steven P. Caliendo ,  Yan Shao ,  Vincent Lagana-Gizzo

IPC: H01L21/66 ,  G05B19/406 ,  H01L21/263

CPC classification number: H01L22/20 ,  G05B19/406 ,  G05B2219/40624 ,  G05B2219/45031 ,  H01J37/304 ,  H01J2237/30483 ,  H01J2237/31 ,  H01L22/12

Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

Abstract translation: 描述用于执行工件的位置特定处理的系统和方法。 该方法包括将微电子工件放置在光束处理系统中，为小于微电子工件的尺寸的光束扫描图案选择光束扫描尺寸，产生处理光束，以及通过照射来处理微电子工件的目标区域 沿着光束扫描图案的处理光束到被选择用于处理微电子工件的光束扫描尺寸内的目标区域上。