Invention Grant
- Patent Title: Fin diode structure
- Patent Title (中): 鳍二极管结构
-
Application No.: US14742723Application Date: 2015-06-18
-
Publication No.: US09331064B2Publication Date: 2016-05-03
- Inventor: Chang-Tzu Wang , Ping-Chen Chang , Tien-Hao Tang , Kuan-Cheng Su
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/02 ; H01L29/861 ; H01L21/76 ; H01L29/78 ; H01L27/06 ; H01L29/06 ; H01L21/22 ; H01L21/265 ; H01L21/306 ; H01L29/66 ; H01L29/16 ; H01L29/20
Abstract:
A fin diode structure includes a doped well formed in a substrate, a plurality of fins of first conductivity type and a plurality of fins of second conductivity type protruding from the doped well isolated from ins of first conductivity type by STIs, at least one doped region of first conductivity type in the substrate between the fins of first conductivity type, the STIs and the doped well and connecting with the fins of first conductivity type, and at least one doped region of second conductivity type in the substrate between the fins of second conductivity type, the STIs and the doped well and connecting with the fins of second conductivity type. The doping concentration of the fins of first conductivity type is greater than that of the doped region of first conductivity type whose doping concentration is greater than that of the doped well of first conductivity type.
Public/Granted literature
- US20150287838A1 FIN DIODE STRUCTURE Public/Granted day:2015-10-08
Information query
IPC分类:
