Invention Grant
- Patent Title: Silicon nanowire formation in replacement metal gate process
- Patent Title (中): 替代金属栅极工艺中的硅纳米线形成
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Application No.: US14301587Application Date: 2014-06-11
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Publication No.: US09331146B2Publication Date: 2016-05-03
- Inventor: Chia-Yu Chen , Zuoguang Liu , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/06 ; H01L29/66 ; H01L21/3105 ; H01L21/02 ; H01L21/3065 ; H01L21/28 ; H01L21/306 ; H01L29/78 ; H01L29/49 ; H01L29/423 ; H01L29/51
Abstract:
Techniques for a semiconductor device are provided. Techniques are directed to forming a semiconductor device by: forming a fin structure in a substrate, forming a protective layer over an upper portion of the fin structure, the protective layer having an etch selectivity with respect to a material of the fin structure, and performing an undercut etch so as to remove a lower portion of the fin structure below the protective layer, thereby defining a nanowire structure from the fin structure.
Public/Granted literature
- US20150364543A1 SILICON NANOWIRE FORMATION IN REPLACEMENT METAL GATE PROCESS Public/Granted day:2015-12-17
Information query
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