Invention Grant
- Patent Title: Microelectronic structure including air gap
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Application No.: US14739703Application Date: 2015-06-15
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Publication No.: US09332628B2Publication Date: 2016-05-03
- Inventor: Daniel C. Edelstein , David V. Horak , Elbert E. Huang , Satyanarayana V. Nitta , Takeshi Nogami , Shom Ponoth , Terry A. Spooner
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H05K1/02 ; H01L21/768 ; H05K1/03
Abstract:
A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.
Public/Granted literature
- US20150289361A1 MICROELECTRONIC STRUCTURE INCLUDING AIR GAP Public/Granted day:2015-10-08
Information query
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