Invention Grant
- Patent Title: Control of impedance of RF return path
- Patent Title (中): 控制RF返回路径的阻抗
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Application No.: US14043525Application Date: 2013-10-01
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Publication No.: US09337000B2Publication Date: 2016-05-10
- Inventor: Alexei Marakhtanov , Rajinder Dhindsa , Ken Lucchesi , Luc Albarede
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J37/32

Abstract:
A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path.
Public/Granted literature
- US20150091440A1 Control of Impedance of RF Return Path Public/Granted day:2015-04-02
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