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公开(公告)号：US12080518B2
公开(公告)日：2024-09-03
申请号：US17795225
申请日：2021-01-12
CPC分类号： H01J37/32183 , H01J37/32577 , H03H7/38
摘要： An impedance match is described. The impedance match includes a housing having a bottom portion and a top portion. The bottom portion has match components and the top portion has an elongated body. A low frequency input is connected through the bottom portion of the housing, and the low frequency input is interconnected to a first set of capacitors and inductors. A high frequency input is connected through the bottom portion of the housing, and the high frequency input is interconnected to a second set of capacitors and inductors. An elongated strap extends between the bottom portion and the top portion of the housing. A lower portion of the elongated strap is coupled to the second set of capacitors and inductors and an upper portion of the elongated strap is connected to an RF rod at an end of the elongated body.
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公开(公告)号：US20230317414A1
公开(公告)日：2023-10-05
申请号：US18010900
申请日：2021-06-23
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J2237/334
摘要： First, second, third, and fourth radiofrequency (RF) signal generators generate first, second, third, and fourth RF signals, respectively, having first, second, third, and fourth frequencies, respectively. The second and third frequencies are different specified harmonics of the first frequency. The fourth frequency is at least two orders of magnitude larger than the first frequency. An impedance matching system controls impedances for the first, second, third, and fourth RF signal generators. A control module is programmed to control: A) a first phase difference between the first and second RF signals, B) a second phase difference between the first and third RF signals, C) a first voltage difference between the first and second RF signals, D) a second voltage difference between the first and third RF signals. The first and second phase differences and the first and second voltage differences collectively control a plasma sheath voltage as a function of time.
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公开(公告)号：US20230059495A1
公开(公告)日：2023-02-23
申请号：US17793366
申请日：2021-01-30
发明人： Alexei Marakhtanov , Felix Kozakevich , Bing Ji , Ranadeep Bhowmick , Kenneth Lucchesi , John Holland
IPC分类号： H01J37/32 , H01L21/683
摘要： A fixed outer support flange (flange 1) is formed to circumscribe an electrode within a plasma processing system. Flange 1 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. An articulating outer support flange (flange 2) is formed to circumscribe flange 1. Flange 2 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of flange 2 is positioned concentrically outside of the vertical portion of flange 1. Flange 2 is spaced apart from flange 1 and moveable along the vertical portion of flange 1. Each of a plurality of electrically conductive straps has a first end portion connected to flange 2 and a second end portion connected to flange 1.
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公开(公告)号：US20220199366A1
公开(公告)日：2022-06-23
申请号：US17691011
申请日：2022-03-09
IPC分类号： H01J37/32
摘要： A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.
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公开(公告)号：US20200243307A1
公开(公告)日：2020-07-30
申请号：US16845723
申请日：2020-04-10
发明人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la Llera , Darrell Ehrlich
IPC分类号： H01J37/32
摘要： A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.
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公开(公告)号：US10283330B2
公开(公告)日：2019-05-07
申请号：US15636519
申请日：2017-06-28
发明人： Alexei Marakhtanov , Felix Kozakevich , Michael C. Kellogg , John Patrick Holland , Zhigang Chen , Kenneth Lucchesi , Lin Zhao
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/687
摘要： Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.
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7.发明申请公开(公告)号：US20190057839A1
公开(公告)日：2019-02-21
申请号：US16165950
申请日：2018-10-19
发明人： Michael C. Kellogg , Alexei Marakhtanov , John Patrick Holland , Zhigang Chen , Felix Kozakevich , Kenneth Lucchesi
IPC分类号： H01J37/32 , H01J37/147
摘要： Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.
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公开(公告)号：US09793126B2
公开(公告)日：2017-10-17
申请号：US14033241
申请日：2013-09-20
IPC分类号： C23C14/34 , H01L21/3065 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32357 , H01J37/32422 , H01J2237/334 , H01L21/3065
摘要： The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.
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公开(公告)号：US20170213747A9
公开(公告)日：2017-07-27
申请号：US14033241
申请日：2013-09-20
IPC分类号： H01L21/67 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32357 , H01J37/32422 , H01J2237/334 , H01L21/3065
摘要： The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.
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公开(公告)号：US20170103870A1
公开(公告)日：2017-04-13
申请号：US14878666
申请日：2015-10-08
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32174 , H01J37/32183 , H01J37/32449 , H01J37/32532 , H01J2237/334
摘要： An impedance matching circuit (IMC) is described. The IMC includes a first circuit that includes a first plurality of tuning elements defined along a path. The first circuit has an input coupled to a kilohertz (kHz) radio frequency (RF) generator. The first circuit is coupled to an output. The IMC further includes a second circuit having a second plurality of tuning elements. The second circuit has an input coupled to a megahertz (MHz) RF generator and is coupled to the output. The IMC includes a uniformity control circuit (UCC) defined from at least one of the plurality of tuning elements of the first circuit. The UCC is connected serially along the path of the first circuit to define a capacitance that at least partially influences a radial uniformity profile in an etch rate produced by a plasma chamber.
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