Invention Grant
- Patent Title: Replacement gate MOSFET with a high performance gate electrode
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Application No.: US14571628Application Date: 2014-12-16
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Publication No.: US09337289B2Publication Date: 2016-05-10
- Inventor: Zhengwen Li , Dechao Guo , Randolph F. Knarr , Chengwen Pei , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong , Jian Yu , Jun Yuan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/78

Abstract:
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
Public/Granted literature
- US20150137269A1 REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE Public/Granted day:2015-05-21
Information query
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