公开(公告)号：US09337289B2

公开(公告)日：2016-05-10

申请号：US14571628

申请日：2014-12-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengwen Li ,  Dechao Guo ,  Randolph F. Knarr ,  Chengwen Pei ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jian Yu ,  Jun Yuan

IPC: H01L21/70 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42368 ,  H01L29/42376 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66606 ,  H01L29/78 ,  H01L29/7833

Abstract: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

公开(公告)号：US20180261507A1

公开(公告)日：2018-09-13

申请号：US15454445

申请日：2017-03-09

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES INC. ,  Lam Research Corporation

Inventor： Georges Jacobi ,  Vimal K. Kamineni ,  Randolph F. Knarr ,  Balasubramanian Pranatharthiharan ,  Muthumanickam Sankarapandian

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/40 ,  H01L21/28

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.

公开(公告)号：US10546785B2

公开(公告)日：2020-01-28

申请号：US15454445

申请日：2017-03-09

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES INC. ,  Lam Research Corporation

Inventor： Georges Jacobi ,  Vimal K. Kamineni ,  Randolph F. Knarr ,  Balasubramanian Pranatharthiharan ,  Muthumanickam Sankarapandian

IPC: H01L21/8234 ,  H01L21/768 ,  H01L21/28 ,  H01L29/40 ,  H01L29/66

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.

公开(公告)号：US10707132B2

公开(公告)日：2020-07-07

申请号：US16557195

申请日：2019-08-30

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES INC. ,  Lam Research Corporation

Inventor： Georges Jacobi ,  Vimal K. Kamineni ,  Randolph F. Knarr ,  Balasubramanian Pranatharthiharan ,  Muthumanickam Sankarapandian

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/40

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.

公开(公告)号：US20190385912A1

公开(公告)日：2019-12-19

申请号：US16557128

申请日：2019-08-30

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES INC. ,  Lam Research Corporation

Inventor： Georges Jacobi ,  Vimal K. Kamineni ,  Randolph F. Knarr ,  Balasubramanian Pranatharthiharan ,  Muthumanickam Sankarapandian

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/40 ,  H01L21/28

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.

公开(公告)号：US20190385913A1

公开(公告)日：2019-12-19

申请号：US16557195

申请日：2019-08-30

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES INC. ,  Lam Research Corporation

Inventor： Georges Jacobi ,  Vimal K. Kamineni ,  Randolph F. Knarr ,  Balasubramanian Pranatharthiharan ,  Muthumanickam Sankarapandian

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/40 ,  H01L21/28

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.