Invention Grant
US09337341B2 Semiconductor device having aluminum-containing layer between two curved substrates
有权
在两个弯曲基板之间具有含铝层的半导体器件
- Patent Title: Semiconductor device having aluminum-containing layer between two curved substrates
- Patent Title (中): 在两个弯曲基板之间具有含铝层的半导体器件
-
Application No.: US14656959Application Date: 2015-03-13
-
Publication No.: US09337341B2Publication Date: 2016-05-10
- Inventor: Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-402016 20011228
- Main IPC: H01L27/28
- IPC: H01L27/28 ; H01L29/786 ; G02F1/1368 ; G02F1/1333 ; H01L21/20 ; H01L21/67 ; H01L21/683 ; H01L21/762 ; H01L27/12 ; H01L27/15 ; H01L27/32 ; H01L29/66 ; H01L51/00 ; H01L51/56
Abstract:
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
Public/Granted literature
- US09299846B2 Semiconductor device having aluminum-containing layer between two curved substrates Public/Granted day:2016-03-29
Information query
IPC分类:
