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公开(公告)号：US10957723B2
公开(公告)日：2021-03-23
申请号：US16847933
申请日：2020-04-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Toru Takayama , Junya Maruyama , Yuugo Goto , Hideaki Kuwabara , Shunpei Yamazaki
IPC: H01L21/00 , H01L27/12 , H01L21/762 , H01L27/32 , B60R1/00 , B60R11/02 , B60R11/04 , H01L21/683 , B60R11/00
Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
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公开(公告)号：US20200294848A1
公开(公告)日：2020-09-17
申请号：US16832442
申请日：2020-03-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/762 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/56 , H01L21/308
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
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公开(公告)号：US10607883B2
公开(公告)日：2020-03-31
申请号：US15479311
申请日：2017-04-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/00 , H01L21/762 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/56 , H01L21/308 , H01L27/32
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
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公开(公告)号：US10529748B2
公开(公告)日：2020-01-07
申请号：US15834163
申请日：2017-12-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
IPC: H01L51/00 , H01L27/12 , B32B7/06 , B32B43/00 , H01L21/762 , H01L29/66 , H01L29/786 , H01L27/32 , G02F1/1368 , H01L51/56 , G02F1/136 , H01L21/322 , H01L51/52
Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
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公开(公告)号：US10083823B2
公开(公告)日：2018-09-25
申请号：US14578603
申请日：2014-12-22
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Toru Takayama , Keiji Sato
IPC: H01J37/34 , C04B35/01 , C04B35/453 , C04B35/645 , C04B41/00 , C04B41/80 , C23C14/10 , C23C14/34 , C23C14/56 , H01L21/02 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/786 , B29C31/00 , H01L29/66 , C04B111/00
CPC classification number: H01J37/3429 , B29C31/008 , C04B35/01 , C04B35/453 , C04B35/645 , C04B35/6455 , C04B41/0072 , C04B41/009 , C04B41/80 , C04B2111/00844 , C04B2235/3284 , C04B2235/3286 , C04B2235/3418 , C04B2235/658 , C04B2235/662 , C04B2235/666 , C04B2235/77 , C23C14/10 , C23C14/3414 , C23C14/564 , H01J2237/332 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/7869 , C04B35/04 , C04B35/10 , C04B35/457 , C04B41/4517 , C04B41/53
Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
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Patent Agency Ranking
6.发明授权公开(公告)号：US10038012B2
公开(公告)日：2018-07-31
申请号：US15397045
申请日：2017-01-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junya Maruyama , Toru Takayama , Yumiko Ohno , Shunpei Yamazaki
IPC: H01L27/12 , H01L33/56 , H01L33/62 , H01L29/786 , H01L33/24 , H01L33/44 , H01L21/762
CPC classification number: H01L27/1218 , H01L21/76251 , H01L27/1214 , H01L27/1248 , H01L27/1266 , H01L29/78603 , H01L33/24 , H01L33/44 , H01L33/56 , H01L33/62 , H01L2221/68368
Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
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公开(公告)号：US09620408B2
公开(公告)日：2017-04-11
申请号：US14644375
申请日：2015-03-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/00 , H01L21/762 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/56 , H01L21/308 , H01L27/32
CPC classification number: H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
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公开(公告)号：US20170018736A1
公开(公告)日：2017-01-19
申请号：US15219637
申请日：2016-07-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Toru Takayama
CPC classification number: H01L51/5253 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/0072 , H01L51/0078 , H01L51/0081 , H01L51/0085 , H01L51/0097 , H01L51/5016 , H01L51/5056 , H01L51/5088 , H01L51/5237 , H01L51/5246 , H01L51/5259 , H01L51/56 , H01L2227/323 , H01L2251/301 , H01L2251/303 , H01L2251/5338 , H01L2251/558
Abstract: An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.
Abstract translation: 目的是提高通过组合TFT和有机发光元件而构成的发光器件的可靠性。 在与发光器件（1200）的结构元件相同的衬底（1203）上形成TFT（1201）和有机发光元件（1202）。 在TFT（1201）的基板（1203）侧形成有用作阻挡层的第一绝缘膜（1205），在相对的上层侧形成作为保护膜的第二绝缘膜（1206）。 此外，在有机发光元件（1202）的下层侧形成用作阻挡膜的第三绝缘膜（1207）。 第三绝缘膜（1207）由诸如氮化硅膜，氮氧化硅膜，氮化铝膜，氧化铝膜或氮氧化铝膜的无机绝缘膜形成。 使用类似的无机绝缘膜形成在有机发光元件（1202）的上层侧上形成的第四绝缘膜（1208）和分隔层（1209）。
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公开(公告)号：US09502679B2
公开(公告)日：2016-11-22
申请号：US14511198
申请日：2014-10-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hirokazu Yamagata , Shunpei Yamazaki , Toru Takayama
CPC classification number: H01L51/524 , H01L27/3246 , H01L27/3258 , H01L51/0003 , H01L51/5056 , H01L51/5203 , H01L51/5206 , H01L51/5253 , H01L51/56 , Y10S438/976
Abstract: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.
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公开(公告)号：US09406903B2
公开(公告)日：2016-08-02
申请号：US14816654
申请日：2015-08-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Toru Takayama
CPC classification number: H01L51/5253 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/0072 , H01L51/0078 , H01L51/0081 , H01L51/0085 , H01L51/0097 , H01L51/5016 , H01L51/5056 , H01L51/5088 , H01L51/5237 , H01L51/5246 , H01L51/5259 , H01L51/56 , H01L2227/323 , H01L2251/301 , H01L2251/303 , H01L2251/5338 , H01L2251/558
Abstract: An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.
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