Invention Grant
- Patent Title: Method and apparatus providing multi-step deposition of thin film layer
- Patent Title (中): 提供薄膜层多步沉积的方法和装置
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Application No.: US14551707Application Date: 2014-11-24
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Publication No.: US09337376B2Publication Date: 2016-05-10
- Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
- Applicant: First Solar, Inc.
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: Blank Rome LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; C23C14/22 ; H01L21/02 ; C23C14/06 ; C23C14/24 ; H01L31/0296

Abstract:
A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Public/Granted literature
- US20150079725A1 METHOD AND APPARATUS PROVIDING MULTI-STEP DEPOSITION OF THIN FILM LAYER Public/Granted day:2015-03-19
Information query
IPC分类: