发明授权
US09337391B2 Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
有权
半导体发光器件，包括该发光器件的发光器件封装以及包括该半导体发光器件的照明器件
- 专利标题： Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
- 专利标题（中）： 半导体发光器件，包括该发光器件的发光器件封装以及包括该半导体发光器件的照明器件
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申请号： US14661950申请日： 2015-03-18
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公开(公告)号： US09337391B2公开(公告)日： 2016-05-10
- 发明人: Jai Won Jean , Min Hwan Kim , Eun Deok Sim , Jong Hyun Lee , Heon Ho Lee , Ho Chul Lee , Jae Sung Hyun
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2014-0103943 20140811
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L33/32 ; H01L33/00 ; H01L33/02 ; H01L33/06 ; H01L33/14 ; H01L33/50 ; H01L33/24 ; H01L33/46 ; B82Y20/00
摘要：
A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.
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