Invention Grant
US09337391B2 Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
有权
半导体发光器件，包括该发光器件的发光器件封装以及包括该半导体发光器件的照明器件
- Patent Title: Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
- Patent Title (中): 半导体发光器件，包括该发光器件的发光器件封装以及包括该半导体发光器件的照明器件
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Application No.: US14661950Application Date: 2015-03-18
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Publication No.: US09337391B2Publication Date: 2016-05-10
- Inventor: Jai Won Jean , Min Hwan Kim , Eun Deok Sim , Jong Hyun Lee , Heon Ho Lee , Ho Chul Lee , Jae Sung Hyun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2014-0103943 20140811
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/32 ; H01L33/00 ; H01L33/02 ; H01L33/06 ; H01L33/14 ; H01L33/50 ; H01L33/24 ; H01L33/46 ; B82Y20/00
Abstract:
A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.
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