公开(公告)号：US10134949B2

公开(公告)日：2018-11-20

申请号：US15678462

申请日：2017-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won Jean ,  Min Ho Kim ,  Min Hwan Kim ,  Jang Mi Kim ,  Chul Min Kim ,  Jeong Wook Lee ,  Jae Deok Jeong ,  Yong Seok Choi

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

公开(公告)号：US09337391B2

公开(公告)日：2016-05-10

申请号：US14661950

申请日：2015-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won Jean ,  Min Hwan Kim ,  Eun Deok Sim ,  Jong Hyun Lee ,  Heon Ho Lee ,  Ho Chul Lee ,  Jae Sung Hyun

IPC: H01L21/00 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14 ,  H01L33/50 ,  H01L33/24 ,  H01L33/46 ,  B82Y20/00

CPC classification number: H01L33/325 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  H01L33/502 ,  Y10S977/95

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的边界层，其带隙能量在单个方向上减小，并且由经验公式AlxInyGa1-x-yN（0＆n1E; x＆ ; 0.1,0.01＆amp; nlE; y＆nlE; 0.1），设置在边界层上并具有一个或多个InGaN层和一个或多个GaN层交替堆叠的结构的有源层和p型半导体层。