Invention Grant
- Patent Title: Photoelectronic element and the manufacturing method thereof
- Patent Title (中): 光电元件及其制造方法
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Application No.: US12751642Application Date: 2010-03-31
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Publication No.: US09337407B2Publication Date: 2016-05-10
- Inventor: Chiu-Lin Yao
- Applicant: Chiu-Lin Yao
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW98110800A 20090331; CN200910134306 20090410
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/64 ; H01L33/14 ; H01L33/22 ; H01L33/38 ; H01L33/44 ; H01L33/46

Abstract:
A photoelectronic element includes an electrically insulative substrate, an electrically conductive substrate, an intermediate layer and a semiconductor stacked layer. The electrically insulative substrate has a top surface. The electrically conductive substrate has a lower portion, and an upper portion surrounded by the electrically insulative substrate and coplanar with the top surface. The intermediate layer has a first portion formed directly under the electrically insulative substrate and above the electrically conductive substrate, a second portion and a bent portion formed between the first portion and the second portion. The semiconductor stacked layer has an light-emitting active layer with a high band gap, disposed on the electrically insulative substrate and the upper portion.
Public/Granted literature
- US20100244077A1 PHOTOELECTRONIC ELEMENT AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2010-09-30
Information query
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