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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08022425B2

    公开(公告)日：2011-09-20

    申请号：US12314730

    申请日：2008-12-16

    Applicant: Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

    Inventor： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

    IPC: H01L33/00

    CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

    Abstract translation: 提供了示例性的半导体器件。 半导体器件包括半导体堆叠层和导电结构。 导电结构位于半导体堆叠层上。 导电结构包括底部和在其相对侧上的顶部。 底部与半导体堆叠层接触。 顶部的顶部宽度与底部的底部宽度之比小于0.7。 导电结构可以是导电点结构或导线结构。

    Light-emitting device
    6.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08502194B2

    公开(公告)日：2013-08-06

    申请号：US13170360

    申请日：2011-06-28

    Applicant: Chiu-Lin Yao ,  Ta-Cheng Hsu

    Inventor： Chiu-Lin Yao ,  Ta-Cheng Hsu

    IPC: H01L29/06

    CPC classification number: H01L33/06 ,  H01L2933/0083

    Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

    Abstract translation: 公开了一种发光器件及其制造方法。 发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。 它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。 光子晶体发光器件可以提高内部效率和光提取效率。

    LIGHT-EMITTING ELEMENT
    9.
    发明申请
    LIGHT-EMITTING ELEMENT 有权
    发光元件

    公开(公告)号：US20110089444A1

    公开(公告)日：2011-04-21

    申请号：US12979281

    申请日：2010-12-27

    Applicant: Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Wen-Huang Liu

    Inventor： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Wen-Huang Liu

    IPC: H01L33/08

    CPC classification number: H01L33/42 ,  F21K9/00 ,  H01L25/0753 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    Abstract: A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection.

    Abstract translation: 发光元件包括载体，布置在载体上的导电连接结构，外延堆叠结构，至少包括设置在导电连接结构上的第一照明堆叠和第二照明堆叠;绝缘部分，设置在外延堆叠结构和 所述导电连接结构和至少布置在所述发光元件表面上的金属线，其中所述第一发光层还包括形成在其上的具有不同极性的两个电极; 第二照明堆叠在其底部与导电连接结构电连接并且包括形成在其上的电极。 绝缘部分设置在第一照明堆叠的下方，以使第一照明堆叠与导电连接结构绝缘。 金属线和导电连接结构以并联或串联连接电连接到每个照明堆叠。

    LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES
    10.
    发明申请
    LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES 有权
    具有不同形貌的粗糙表面的发光装置

    公开(公告)号：US20110024789A1

    公开(公告)日：2011-02-03

    申请号：US12905795

    申请日：2010-10-15

    Applicant: Chiu-Lin Yao ,  Ta-Cheng Hsu

    Inventor： Chiu-Lin Yao ,  Ta-Cheng Hsu

    IPC: H01L33/22

    CPC classification number: H01L33/22 ,  H01L33/387 ,  H01L2933/0016

    Abstract: This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

    Abstract translation: 本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。 光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。 粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。 该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

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