Invention Grant
- Patent Title: Semiconductor substrate assembly with embedded resistance element
- Patent Title (中): 半导体衬底组件带嵌入式电阻元件
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Application No.: US14570684Application Date: 2014-12-15
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Publication No.: US09343393B2Publication Date: 2016-05-17
- Inventor: Peng-Shu Chen , Shih-Hsien Wu
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Locke Lord LLP
- Agent Tim Tingkang Xia, Esq.
- Priority: TW101129625A 20120815; TW103121406A 20140620
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/64 ; H01L23/522 ; H01L21/02 ; H01L23/498 ; H01L23/66 ; H01L25/065 ; H01L23/14

Abstract:
A semiconductor substrate assembly includes a semiconductor material layer, a first isolation layer, a second isolation layer, a first conductive pillar, and a second conductive pillar. The semiconductor material layer has a first surface and a second surface opposite to the first surface. The first isolation layer is located on the first surface of the semiconductor material layer. The second isolation layer is located on the second surface of the semiconductor material layer. The first conductive pillar, supplied with a first voltage, penetrates the semiconductor material layer, the first isolation layer, and the second isolation layer. The second conductive pillar is supplied with to a second voltage, and a part of the second conductive pillar is formed in the second isolation layer, the second conductive pillar penetrates the second isolation layer and touches the second surface of the semiconductor material layer.
Public/Granted literature
- US20150097298A1 SEMICONDUCTOR SUBSTRATE ASSEMBLY Public/Granted day:2015-04-09
Information query
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