Invention Grant
- Patent Title: Negative biased substrate for pixels in stacked image sensors
- Patent Title (中): 堆叠图像传感器中像素的负偏置衬底
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Application No.: US14448154Application Date: 2014-07-31
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Publication No.: US09344658B2Publication Date: 2016-05-17
- Inventor: Tiejun Dai , Rui Wang , Dyson H. Tai , Sohei Manabe
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H04N5/378 ; H04N5/376 ; H01L27/146

Abstract:
A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.
Public/Granted literature
- US20160037111A1 NEGATIVE BIASED SUBSTRATE FOR PIXELS IN STACKED IMAGE SENSORS Public/Granted day:2016-02-04
Information query
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