Invention Grant
US09349463B2 Semiconductor device and method of manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing the same
Abstract:
To enhance the write speed of a nonvolatile memory. A charge injection/emission part of a nonvolatile memory cell includes an active region having an upper face, a side wall, and a shoulder part connecting the upper face and the side wall, a conductor film covering the upper face and the shoulder part of the active region, and a capacitance insulating film provided between the conductor film and the active region. Furthermore, the active region has a protrusion part constituted of a first concave part with respect to the upper face and a second concave part with respect to the side wall, in the shoulder part.
Public/Granted literature
Information query
Patent Agency Ranking
0/0