Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14679056Application Date: 2015-04-06
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Publication No.: US09349463B2Publication Date: 2016-05-24
- Inventor: Shigeya Toyokawa , Michimoto Kaminaga , Kentaro Yamada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2014-092051 20140425
- Main IPC: H01L27/108
- IPC: H01L27/108 ; G11C16/12 ; H01L27/115 ; H01L29/788 ; H01L21/3065 ; H01L21/308 ; H01L21/3105 ; H01L21/311 ; H01L21/02 ; H01L21/28 ; G11C16/14 ; G11C16/08 ; G11C16/26

Abstract:
To enhance the write speed of a nonvolatile memory. A charge injection/emission part of a nonvolatile memory cell includes an active region having an upper face, a side wall, and a shoulder part connecting the upper face and the side wall, a conductor film covering the upper face and the shoulder part of the active region, and a capacitance insulating film provided between the conductor film and the active region. Furthermore, the active region has a protrusion part constituted of a first concave part with respect to the upper face and a second concave part with respect to the side wall, in the shoulder part.
Public/Granted literature
- US20150311220A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-10-29
Information query
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