Invention Grant
- Patent Title: Semiconductor device having capacitors
- Patent Title (中): 具有电容器的半导体器件
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Application No.: US13709239Application Date: 2012-12-10
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Publication No.: US09349724B2Publication Date: 2016-05-24
- Inventor: Cheon-bae Kim , Yong-chul Oh , Kuk-han Yoon , Kyu-pil Lee , Jong-ryul Jun , Chang-hyun Cho , Gyo-young Jin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2011-0142389 20111226
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/02 ; H01L27/108 ; H01L49/02
Abstract:
A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.
Public/Granted literature
- US20130161787A1 SEMICONDUCTOR DEVICE HAVING CAPACITORS Public/Granted day:2013-06-27
Information query
IPC分类:
