公开(公告)号：US11251307B2

公开(公告)日：2022-02-15

申请号：US16120705

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin Park ,  Jin-bum Kim ,  Bong-soo Kim ,  Kyu-pil Lee ,  Hyeong-sun Hong ,  Yoo-sang Hwang

IPC: H01L29/786 ,  H01L29/778 ,  H01L29/88 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/86 ,  H01L29/24

Abstract: A device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on an upper end of the insulating pattern, a two-dimensional (2D) material layer on a side surface of the insulating pattern, a gate insulating layer covering the 2D material layer, and a gate electrode contacting the gate insulting layer. The insulating pattern extends from the first electrode in a direction substantially vertical to the substrate. The 2D material layer includes at least one atomic layer of a 2D material that is substantially parallel to the side surface of the insulating pattern.

公开(公告)号：US09349724B2

公开(公告)日：2016-05-24

申请号：US13709239

申请日：2012-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheon-bae Kim ,  Yong-chul Oh ,  Kuk-han Yoon ,  Kyu-pil Lee ,  Jong-ryul Jun ,  Chang-hyun Cho ,  Gyo-young Jin

IPC: H01L27/08 ,  H01L27/02 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01L27/0207 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/91

Abstract: A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.

Abstract translation: 一种半导体器件，包括至少一个第一电容器和至少一个第二电容器。 所述至少一个第一电容器包括具有圆柱形形状的第一存储节点。 所述至少一个第二电容器包括具有包括中空部分的中空柱形状的下部第二存储节点和具有圆柱形形状并从所述下部第二存储节点向上延伸的上部第二存储节点。

公开(公告)号：US20190074381A1

公开(公告)日：2019-03-07

申请号：US16120726

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin Park ,  Jin-bum Kim ,  Bong-soo Kim ,  Kyu-pil Lee ,  Hyeong-sun Hong ,  Yoo-sang Hwang

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/78 ,  H01L29/86 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06

Abstract: A device including a two-dimensional (2D) material includes a substrate including a recess recessed from a main surface of the substrate and extending in a first direction, a 2D material pattern on the substrate and intersecting with the recess of the substrate, a gate structure contacting the 2D material pattern and extending in the first direction along the recess of the substrate, a first electrode contacting a first end of the 2D material pattern, and a second electrode contacting a second end of the 2D material pattern. The 2D material pattern extends in a second direction and includes atomic layers that are parallel to a surface of the substrate.

公开(公告)号：US20190074380A1

公开(公告)日：2019-03-07

申请号：US16120705

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin PARK ,  Jin-bum Kim ,  Bong-soo Kim ,  Kyu-pil Lee ,  Hyeong-sun Hong ,  Yoo-sang Hwang

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/78 ,  H01L29/86 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06

Abstract: A device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on an upper end of the insulating pattern, a two-dimensional (2D) material layer on a side surface of the insulating pattern, a gate insulating layer covering the 2D material layer, and a gate electrode contacting the gate insulting layer. The insulating pattern extends from the first electrode in a direction substantially vertical to the substrate. The 2D material layer includes at least one atomic layer of a 2D material that is substantially parallel to the side surface of the insulating pattern.