公开(公告)号：US09349724B2

公开(公告)日：2016-05-24

申请号：US13709239

申请日：2012-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheon-bae Kim ,  Yong-chul Oh ,  Kuk-han Yoon ,  Kyu-pil Lee ,  Jong-ryul Jun ,  Chang-hyun Cho ,  Gyo-young Jin

IPC: H01L27/08 ,  H01L27/02 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01L27/0207 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/91

Abstract: A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.

Abstract translation: 一种半导体器件，包括至少一个第一电容器和至少一个第二电容器。 所述至少一个第一电容器包括具有圆柱形形状的第一存储节点。 所述至少一个第二电容器包括具有包括中空部分的中空柱形状的下部第二存储节点和具有圆柱形形状并从所述下部第二存储节点向上延伸的上部第二存储节点。